Hiromichi Ohta and Kunihito Koumoto
- Published in print:
- 2012
- Published Online:
- January 2013
- ISBN:
- 9780199584123
- eISBN:
- 9780191745331
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199584123.003.0010
- Subject:
- Physics, Condensed Matter Physics / Materials
Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power ...
More
Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. This chapter fabricates high quality epitaxial films composed of oxide thermoelectric materials, which are suitable for clarifying the intrinsic properties. It focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca3Co4O9 and n-type SrTiO3, which exhibit the best thermoelectric figures of merit, ZT(=S 2·σT·κ-1, S: Seebeck coefficient, σ: electrical conductivity, κ: thermal conductivity, and T: absolute temperature) among oxide thermoelectric materials reported to date. In addition, it introduces the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness (~0.4 nm) of SrTiO3.Less
Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. This chapter fabricates high quality epitaxial films composed of oxide thermoelectric materials, which are suitable for clarifying the intrinsic properties. It focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca3Co4O9 and n-type SrTiO3, which exhibit the best thermoelectric figures of merit, ZT(=S 2·σT·κ-1, S: Seebeck coefficient, σ: electrical conductivity, κ: thermal conductivity, and T: absolute temperature) among oxide thermoelectric materials reported to date. In addition, it introduces the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness (~0.4 nm) of SrTiO3.
Evgeny Y. Tsymbal, Elbio R. A. Dagotto, Chang-Beom Eom, and Ramamoorthy Ramesh (eds)
- Published in print:
- 2012
- Published Online:
- January 2013
- ISBN:
- 9780199584123
- eISBN:
- 9780191745331
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199584123.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
This book is devoted to the rapidly developing field of research on oxide thin-films and heterostructures. Recent advances in thin-film deposition and characterization techniques made possible the ...
More
This book is devoted to the rapidly developing field of research on oxide thin-films and heterostructures. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such heterostructures, where two or more complex oxides are combined with atomic-scale precision. Especially notable advances have been made over the past few years, driven by the discovery of fascinating new physical phenomena in oxide heterostructures. The fundamental science underlying these phenomena is rich and exciting and promises novel functionalities and device concepts. The book consists of a set of chapters on topics that represent some of the key innovations in the field over recent years. It starts from fundamentals that include two chapters discussing physics of strongly correlated electronic materials and magnetoelectric coupling in multiferroic materials. Part II of the book is devoted to the growth and characterization of oxide heterostructures and includes four chapters on these subjects comprising key experimental developments in advanced deposition and characterization techniques. Part III of the book addresses functional properties of oxide heterostructures, including two-dimensional electron gases at oxide interfaces, manganite multilayers, and thermoelectric phenomena. Part IV of the book is focused on existing and potential applications of oxide heterostructures, including high-k dielectric materials, ferroelectric field effect transistors (FeFET) and ferroelectric random access memories (FeRAM), and new concepts of oxide electronics. Overall, this book covers the core principles of oxide electronic materials, describes experimental approaches to fabricate and characterize oxide thin-films and heterostructures, demonstrates new functional properties of these materials, and provides an overview of novel applications, as well as the challenges and opportunities in the field.Less
This book is devoted to the rapidly developing field of research on oxide thin-films and heterostructures. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such heterostructures, where two or more complex oxides are combined with atomic-scale precision. Especially notable advances have been made over the past few years, driven by the discovery of fascinating new physical phenomena in oxide heterostructures. The fundamental science underlying these phenomena is rich and exciting and promises novel functionalities and device concepts. The book consists of a set of chapters on topics that represent some of the key innovations in the field over recent years. It starts from fundamentals that include two chapters discussing physics of strongly correlated electronic materials and magnetoelectric coupling in multiferroic materials. Part II of the book is devoted to the growth and characterization of oxide heterostructures and includes four chapters on these subjects comprising key experimental developments in advanced deposition and characterization techniques. Part III of the book addresses functional properties of oxide heterostructures, including two-dimensional electron gases at oxide interfaces, manganite multilayers, and thermoelectric phenomena. Part IV of the book is focused on existing and potential applications of oxide heterostructures, including high-k dielectric materials, ferroelectric field effect transistors (FeFET) and ferroelectric random access memories (FeRAM), and new concepts of oxide electronics. Overall, this book covers the core principles of oxide electronic materials, describes experimental approaches to fabricate and characterize oxide thin-films and heterostructures, demonstrates new functional properties of these materials, and provides an overview of novel applications, as well as the challenges and opportunities in the field.
