Sergey Ganichev and Willi Prettl
- Published in print:
- 2005
- Published Online:
- September 2007
- ISBN:
- 9780198528302
- eISBN:
- 9780191713637
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780198528302.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
This book presents high-power terahertz applications to semiconductors and semiconductor structures. It aims to bridge the gap between optics and microwave physics. It focuses on a core topic of ...
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This book presents high-power terahertz applications to semiconductors and semiconductor structures. It aims to bridge the gap between optics and microwave physics. It focuses on a core topic of semiconductor physics, providing a full description of the state of art of the field. The book introduces new physical phenomena which occur in the terahertz frequency range at the transition from semi-classical physics with a classical field amplitude to the fully quantized limit with photons. It covers tunneling in high-frequency fields, nonlinear absorption of radiation and radiation heating, nonlinear optics in the classical sense, Bloch-oscillations and ponderomotive forces of the terahertz radiation on free carriers, photon drag and photogalvanic effects, and terahertz spin dependent phenomena being of importance in the field of spintronics. Background information for future work and references of current literature are given. The book also discusses various experimental aspects like the generation of high-power coherent terahertz radiation, properties of materials with respect to their application in optical components, and detection schemes of short intense terahertz pulses.Less
This book presents high-power terahertz applications to semiconductors and semiconductor structures. It aims to bridge the gap between optics and microwave physics. It focuses on a core topic of semiconductor physics, providing a full description of the state of art of the field. The book introduces new physical phenomena which occur in the terahertz frequency range at the transition from semi-classical physics with a classical field amplitude to the fully quantized limit with photons. It covers tunneling in high-frequency fields, nonlinear absorption of radiation and radiation heating, nonlinear optics in the classical sense, Bloch-oscillations and ponderomotive forces of the terahertz radiation on free carriers, photon drag and photogalvanic effects, and terahertz spin dependent phenomena being of importance in the field of spintronics. Background information for future work and references of current literature are given. The book also discusses various experimental aspects like the generation of high-power coherent terahertz radiation, properties of materials with respect to their application in optical components, and detection schemes of short intense terahertz pulses.
Alexei L. Ivanov and Sergei G. Tikhodeev (eds)
- Published in print:
- 2007
- Published Online:
- May 2008
- ISBN:
- 9780199238873
- eISBN:
- 9780191716652
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199238873.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
The book, which is dedicated to Prof. Leonid V. Keldysh on his 75th anniversary, is a collection of review papers written by experts in condensed matter physics such as V. M. Agranovich, B. L. ...
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The book, which is dedicated to Prof. Leonid V. Keldysh on his 75th anniversary, is a collection of review papers written by experts in condensed matter physics such as V. M. Agranovich, B. L. Altshuler, E. Burstein, V. L. Ginzburg, K. Von Klitzing, P. B. Littlewood, M. Pepper, A. Pinczuk, L. P. Pitaevskii, E. I. Rashba, T. M. Rice, etc. This is a guide-book of modern condensed matter physics, where the most important and hot topics of the field are reviewed. Topics covered include spintronics and quantum computation, Bose-Einstein condensation of excitons and the excitonic insulator, electron-hole liquid, metal-dielectric transition, coherent optical phenomena in semiconductor nanostructures, composite fermions and the quantum Hall effect, semiconductor and organic quantum wells, microcavities and other nanostructures, disordered systems in condensed matter, many-body theory and the Keldysh diagram technique, resonant acousto-optics, and inelastic electron tunneling spectroscopy.Less
The book, which is dedicated to Prof. Leonid V. Keldysh on his 75th anniversary, is a collection of review papers written by experts in condensed matter physics such as V. M. Agranovich, B. L. Altshuler, E. Burstein, V. L. Ginzburg, K. Von Klitzing, P. B. Littlewood, M. Pepper, A. Pinczuk, L. P. Pitaevskii, E. I. Rashba, T. M. Rice, etc. This is a guide-book of modern condensed matter physics, where the most important and hot topics of the field are reviewed. Topics covered include spintronics and quantum computation, Bose-Einstein condensation of excitons and the excitonic insulator, electron-hole liquid, metal-dielectric transition, coherent optical phenomena in semiconductor nanostructures, composite fermions and the quantum Hall effect, semiconductor and organic quantum wells, microcavities and other nanostructures, disordered systems in condensed matter, many-body theory and the Keldysh diagram technique, resonant acousto-optics, and inelastic electron tunneling spectroscopy.
Thomas Ihn
- Published in print:
- 2009
- Published Online:
- February 2010
- ISBN:
- 9780199534425
- eISBN:
- 9780191715297
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199534425.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
This book presents the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, ...
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This book presents the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunneling transport, the Aharonov–Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It deals with material aspects such as band engineering, doping, gating, and a selection of nanostructure fabrication techniques. The book discusses the Drude–Boltzmann–Sommerfeld transport theory as well as conductance quantization and the Landauer–Büttiker theory. These concepts are extended to mesoscopic interference phenomena and decoherence, magnetotransport, and interaction effects in quantum-confined systems, guiding the reader from fundamental effects to specialized state-of-the-art experiments.Less
This book presents the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunneling transport, the Aharonov–Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It deals with material aspects such as band engineering, doping, gating, and a selection of nanostructure fabrication techniques. The book discusses the Drude–Boltzmann–Sommerfeld transport theory as well as conductance quantization and the Landauer–Büttiker theory. These concepts are extended to mesoscopic interference phenomena and decoherence, magnetotransport, and interaction effects in quantum-confined systems, guiding the reader from fundamental effects to specialized state-of-the-art experiments.
Ralph Skomski
- Published in print:
- 2008
- Published Online:
- January 2010
- ISBN:
- 9780198570752
- eISBN:
- 9780191718816
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780198570752.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
For hundreds of years, models of magnetism have been pivotal in the understanding and advancement of science and technology, from the Earth's interpretation as a magnetic dipole to quantum mechanics, ...
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For hundreds of years, models of magnetism have been pivotal in the understanding and advancement of science and technology, from the Earth's interpretation as a magnetic dipole to quantum mechanics, statistical physics, and modern nanotechnology. This book is the first to envision the field of magnetism in its entirety. It complements a rich literature on specific models of magnetism and provides an introduction to simple models, including some simple limits of complicated models. The book is written in an easily accessible style, with a limited amount of mathematics, and covers a wide range of models on quantum mechanics, finite temperature, micromagnetics, and dynamics. It deals not only with basic magnetic quantities, such as moment, Curie temperature, anisotropy, and coercivity, but also with modern areas such as nanomagnetism and spintronics, and with ‘exotic’ themes, as exemplified by the polymer analogy of magnetic phase transitions. Throughout the book, a sharp line is drawn between simple and simplistic models, and much space is devoted to discussing the merits and failures of the individual model approaches.Less
For hundreds of years, models of magnetism have been pivotal in the understanding and advancement of science and technology, from the Earth's interpretation as a magnetic dipole to quantum mechanics, statistical physics, and modern nanotechnology. This book is the first to envision the field of magnetism in its entirety. It complements a rich literature on specific models of magnetism and provides an introduction to simple models, including some simple limits of complicated models. The book is written in an easily accessible style, with a limited amount of mathematics, and covers a wide range of models on quantum mechanics, finite temperature, micromagnetics, and dynamics. It deals not only with basic magnetic quantities, such as moment, Curie temperature, anisotropy, and coercivity, but also with modern areas such as nanomagnetism and spintronics, and with ‘exotic’ themes, as exemplified by the polymer analogy of magnetic phase transitions. Throughout the book, a sharp line is drawn between simple and simplistic models, and much space is devoted to discussing the merits and failures of the individual model approaches.
T. Dunn, A. L. Chudnovskiy, and A. Kamenev
- Published in print:
- 2012
- Published Online:
- September 2012
- ISBN:
- 9780199691388
- eISBN:
- 9780191742255
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199691388.003.0006
- Subject:
- Physics, Theoretical, Computational, and Statistical Physics
This chapter explores how non-equilibrium noise affects spin-torque switching elements and oscillators. It first discusses the deterministic dynamics of magnetic tunnel junctions, introducing a ...
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This chapter explores how non-equilibrium noise affects spin-torque switching elements and oscillators. It first discusses the deterministic dynamics of magnetic tunnel junctions, introducing a convenient set of slow and fast degrees of freedom. It then derives an effective Langevin equation for the slowly varying energy of precessional orbit and introduces the corresponding energy noise and energy diffusion coefficient. This allows for the formulation of a Fokker–Planck equation for the energy density distribution, which is used to analyze switching time distribution as well as the shape of the optimal spin-current pulse, which minimizes Joule losses of a switch. Finally, the chapter derives a generic expression for the linewidth of a spin-torque oscillator and discusses its dependence on temperature, spin-current amplitude, and other parameters.Less
This chapter explores how non-equilibrium noise affects spin-torque switching elements and oscillators. It first discusses the deterministic dynamics of magnetic tunnel junctions, introducing a convenient set of slow and fast degrees of freedom. It then derives an effective Langevin equation for the slowly varying energy of precessional orbit and introduces the corresponding energy noise and energy diffusion coefficient. This allows for the formulation of a Fokker–Planck equation for the energy density distribution, which is used to analyze switching time distribution as well as the shape of the optimal spin-current pulse, which minimizes Joule losses of a switch. Finally, the chapter derives a generic expression for the linewidth of a spin-torque oscillator and discusses its dependence on temperature, spin-current amplitude, and other parameters.
Jean-Pierre Launay and Michel Verdaguer
- Published in print:
- 2017
- Published Online:
- November 2018
- ISBN:
- 9780198814597
- eISBN:
- 9780191852411
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/oso/9780198814597.001.0001
- Subject:
- Physics, Atomic, Laser, and Optical Physics, Condensed Matter Physics / Materials
The book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons, i.e. molecular electronics and spintronics and ...
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The book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons, i.e. molecular electronics and spintronics and molecular machines. Chapter 1 recalls basic concepts. Chapter 2 describes the magnetic properties due to localized electrons. This includes phenomena such as spin cross-over, exchange interaction from dihydrogen to extended molecular magnetic systems, and magnetic anisotropy with single-molecule magnets. Chapter 3 is devoted to the electrical properties due to moving electrons. One considers first electron transfer in discrete molecular systems, in particular in mixed valence compounds. Then, extended molecular solids, in particular molecular conductors, are described by band theory. Special attention is paid to structural distortions (Peierls instability) and interelectronic repulsions in narrow-band systems. Chapter 4 treats photophysical properties, mainly electron transfer in the excited state and its applications to photodiodes, organic light emitting diodes, photovoltaic cells and water photolysis. Energy transfer is also treated. Photomagnetism (how a photonic excitation modifies magnetic properties) is introduced. Finally, Chapter 5 combines the previous knowledge for three advanced subjects: first molecular electronics in its hybrid form (molecules connected to electrodes acting as wires, diodes, memory elements, field-effect transistors) or in the quantum computation approach. Then, molecular spintronics, using, besides the charge, the spin of the electron. Finally the theme of molecular machines is presented, with the problem of the directionality control of their motion.Less
The book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons, i.e. molecular electronics and spintronics and molecular machines. Chapter 1 recalls basic concepts. Chapter 2 describes the magnetic properties due to localized electrons. This includes phenomena such as spin cross-over, exchange interaction from dihydrogen to extended molecular magnetic systems, and magnetic anisotropy with single-molecule magnets. Chapter 3 is devoted to the electrical properties due to moving electrons. One considers first electron transfer in discrete molecular systems, in particular in mixed valence compounds. Then, extended molecular solids, in particular molecular conductors, are described by band theory. Special attention is paid to structural distortions (Peierls instability) and interelectronic repulsions in narrow-band systems. Chapter 4 treats photophysical properties, mainly electron transfer in the excited state and its applications to photodiodes, organic light emitting diodes, photovoltaic cells and water photolysis. Energy transfer is also treated. Photomagnetism (how a photonic excitation modifies magnetic properties) is introduced. Finally, Chapter 5 combines the previous knowledge for three advanced subjects: first molecular electronics in its hybrid form (molecules connected to electrodes acting as wires, diodes, memory elements, field-effect transistors) or in the quantum computation approach. Then, molecular spintronics, using, besides the charge, the spin of the electron. Finally the theme of molecular machines is presented, with the problem of the directionality control of their motion.
Sadamichi Maekawa, Sergio O. Valenzuela, Eiji Saitoh, and Takashi Kimura (eds)
- Published in print:
- 2017
- Published Online:
- December 2017
- ISBN:
- 9780198787075
- eISBN:
- 9780191829147
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/oso/9780198787075.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow ...
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Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.Less
Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.
L. Solymar, D. Walsh, and R. R. A. Syms
- Published in print:
- 2018
- Published Online:
- October 2018
- ISBN:
- 9780198829942
- eISBN:
- 9780191868504
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/oso/9780198829942.003.0011
- Subject:
- Physics, Condensed Matter Physics / Materials, Atomic, Laser, and Optical Physics
Macroscopic and microscopic theories of magnetic polarization are discussed. The origin of domains, domain walls, and of the hysteresis curve and the contrast between soft and hard magnetic materials ...
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Macroscopic and microscopic theories of magnetic polarization are discussed. The origin of domains, domain walls, and of the hysteresis curve and the contrast between soft and hard magnetic materials are explained. The more important elements of the quantum theory of magnetism are discussed. The principles of the alignments in antiferromagnetic and ferromagnetic materials are explained. Magnetic resonance phenomena are discussed. Magnetoresistance and spintronics and their device prospects are also discussed at some length.Less
Macroscopic and microscopic theories of magnetic polarization are discussed. The origin of domains, domain walls, and of the hysteresis curve and the contrast between soft and hard magnetic materials are explained. The more important elements of the quantum theory of magnetism are discussed. The principles of the alignments in antiferromagnetic and ferromagnetic materials are explained. Magnetic resonance phenomena are discussed. Magnetoresistance and spintronics and their device prospects are also discussed at some length.
Brian K. Ridley
- Published in print:
- 2013
- Published Online:
- December 2013
- ISBN:
- 9780199677214
- eISBN:
- 9780191760624
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199677214.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style. The fifth edition includes new chapters that ...
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This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology. One of the problems encountered in high-power transistors is the excessive production of phonons, and the first new chapter examines the hot-phonon phenomenon and the lifetime of polar optical phonons in the nitrides. In the burgeoning field of spintronics a crucial parameter is the lifetime of a spin-polarised electron gas, and this is treated in detail in the second of the new chapters. The third new chapter moves from the treatment of bulk properties to the unavoidable effects of the spatial limitation of the semiconductor, and to the influence of surface states and the pinning of the Fermi level. As with previous editions the text restricts its attention to bulk semiconductors. The account progresses from quantum processes describable by density matrices, through the semi-classical Boltzmann equation and its solutions, to the drift-diffusion description of space-charge waves, the latter appearing in the contexts of negative differential resistance, acoustoelectric and recombination instabilities.Less
This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology. One of the problems encountered in high-power transistors is the excessive production of phonons, and the first new chapter examines the hot-phonon phenomenon and the lifetime of polar optical phonons in the nitrides. In the burgeoning field of spintronics a crucial parameter is the lifetime of a spin-polarised electron gas, and this is treated in detail in the second of the new chapters. The third new chapter moves from the treatment of bulk properties to the unavoidable effects of the spatial limitation of the semiconductor, and to the influence of surface states and the pinning of the Fermi level. As with previous editions the text restricts its attention to bulk semiconductors. The account progresses from quantum processes describable by density matrices, through the semi-classical Boltzmann equation and its solutions, to the drift-diffusion description of space-charge waves, the latter appearing in the contexts of negative differential resistance, acoustoelectric and recombination instabilities.
Sadamichi Maekawa, Sergio O. Valenzuela, Eiji Saitoh, and Takashi Kimura (eds)
- Published in print:
- 2012
- Published Online:
- December 2013
- ISBN:
- 9780199600380
- eISBN:
- 9780191775062
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199600380.001.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow ...
More
Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called ‘spin current’, are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.Less
Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called ‘spin current’, are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.
Juha Saatsi
- Published in print:
- 2020
- Published Online:
- May 2020
- ISBN:
- 9780198814979
- eISBN:
- 9780191852817
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/oso/9780198814979.003.0003
- Subject:
- Philosophy, Philosophy of Science
Scientific realism about spin is easily motivated. But what does it amount to? To answer this question, Chapter 3 contrasts in general terms two epistemological conceptions of realism—truth-content ...
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Scientific realism about spin is easily motivated. But what does it amount to? To answer this question, Chapter 3 contrasts in general terms two epistemological conceptions of realism—truth-content vs. progress realism—before problematizing truth-content realism in the context of quantum physics. After articulating the challenge faced by truth-content realism, the chapter argues that progress realism avoids it, offering a stable middle ground between anti-realism and traditional truth-content realism.Less
Scientific realism about spin is easily motivated. But what does it amount to? To answer this question, Chapter 3 contrasts in general terms two epistemological conceptions of realism—truth-content vs. progress realism—before problematizing truth-content realism in the context of quantum physics. After articulating the challenge faced by truth-content realism, the chapter argues that progress realism avoids it, offering a stable middle ground between anti-realism and traditional truth-content realism.
E. Saitoh
- Published in print:
- 2012
- Published Online:
- December 2013
- ISBN:
- 9780199600380
- eISBN:
- 9780191775062
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199600380.003.0001
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter is an introduction to the concept of spin current, the detailed formulation of which is not simple by any means and is still a challenging undertaking. However, it is a useful and ...
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This chapter is an introduction to the concept of spin current, the detailed formulation of which is not simple by any means and is still a challenging undertaking. However, it is a useful and versatile concept that has given birth to a number of phenomena in condensed matter science and spintronics. There exist certain types of flow, carried by electrons, in condensed matter. This flow of electron charge or electric current has been developed and is now a vital contributor to how electronics is understood today. Since an electron carries both charge and spin, the existence of an electric current naturally implies the existence of a flow of spin. This flow is called a spin current.Less
This chapter is an introduction to the concept of spin current, the detailed formulation of which is not simple by any means and is still a challenging undertaking. However, it is a useful and versatile concept that has given birth to a number of phenomena in condensed matter science and spintronics. There exist certain types of flow, carried by electrons, in condensed matter. This flow of electron charge or electric current has been developed and is now a vital contributor to how electronics is understood today. Since an electron carries both charge and spin, the existence of an electric current naturally implies the existence of a flow of spin. This flow is called a spin current.
K. Takanashi and Y. Sakuraba
- Published in print:
- 2012
- Published Online:
- December 2013
- ISBN:
- 9780199600380
- eISBN:
- 9780191775062
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199600380.003.0005
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter explains how the exchange splitting between up- and down-spin bands in ferromagnets unexceptionally generates spin-polarised electronic states at the Fermi energy. The quantity of spin ...
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This chapter explains how the exchange splitting between up- and down-spin bands in ferromagnets unexceptionally generates spin-polarised electronic states at the Fermi energy. The quantity of spin polarisation P in ferromagnets is one of the important parameters for application in spintronics, since a ferromagnet having a higher P is able to generate larger various spin-dependent effects such as the magnetoresistance effect, spin transfer torque, spin accumulation, and so on. However, the spin polarisations of general 3d transition metals or alloys generally limit the size of spin-dependent effects. Thus, ‘half-metals’ attract much interest as an ideal source of spin current and spin-dependent scattering because they possess perfectly spin-polarised conduction electrons due to the energy band gap in either the up- or down-spin channel at the Fermi level.Less
This chapter explains how the exchange splitting between up- and down-spin bands in ferromagnets unexceptionally generates spin-polarised electronic states at the Fermi energy. The quantity of spin polarisation P in ferromagnets is one of the important parameters for application in spintronics, since a ferromagnet having a higher P is able to generate larger various spin-dependent effects such as the magnetoresistance effect, spin transfer torque, spin accumulation, and so on. However, the spin polarisations of general 3d transition metals or alloys generally limit the size of spin-dependent effects. Thus, ‘half-metals’ attract much interest as an ideal source of spin current and spin-dependent scattering because they possess perfectly spin-polarised conduction electrons due to the energy band gap in either the up- or down-spin channel at the Fermi level.
S. E. Barnes
- Published in print:
- 2012
- Published Online:
- December 2013
- ISBN:
- 9780199600380
- eISBN:
- 9780191775062
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199600380.003.0007
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter begins with Faraday's law, which states that electromotive forces power everything by virtue of the charge e of an electron, and introduces spinmotive forces which reflect the magnetic ...
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This chapter begins with Faraday's law, which states that electromotive forces power everything by virtue of the charge e of an electron, and introduces spinmotive forces which reflect the magnetic moment of an electron. This motive force reflects the energy conservation requirements of the spin-torque transfer process that is at the heart of spintronics. The Stern-Gerlach experiment that used spin-dependent forces established the existence of spin. It is shown here that conservative forces would exist even if an electron was not charged, and do exist for uncharged excitations, such as magnons or phonons. Such forces are especially important in ferromagnetic materials where the spinmotive force commonly drives an electronic charge current due to the higher mobility of the majority electrons.Less
This chapter begins with Faraday's law, which states that electromotive forces power everything by virtue of the charge e of an electron, and introduces spinmotive forces which reflect the magnetic moment of an electron. This motive force reflects the energy conservation requirements of the spin-torque transfer process that is at the heart of spintronics. The Stern-Gerlach experiment that used spin-dependent forces established the existence of spin. It is shown here that conservative forces would exist even if an electron was not charged, and do exist for uncharged excitations, such as magnons or phonons. Such forces are especially important in ferromagnetic materials where the spinmotive force commonly drives an electronic charge current due to the higher mobility of the majority electrons.
G. E. W. Bauer
- Published in print:
- 2012
- Published Online:
- December 2013
- ISBN:
- 9780199600380
- eISBN:
- 9780191775062
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199600380.003.0009
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter focuses on spin caloritronics, the field combining thermoelectrics with spintronics and nanomagnetism. The term ‘caloritronics’ has recently been introduced to describe the endeavour to ...
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This chapter focuses on spin caloritronics, the field combining thermoelectrics with spintronics and nanomagnetism. The term ‘caloritronics’ has recently been introduced to describe the endeavour to control heat transport on micro- and nanometer scales. Alternative expressions such as ‘heattronics’ or ‘caloric transport’ have also been suggested. Specifically, spin caloritronics is concerned with new physics related to spin, charge, and entropy/energy transport in materials and nanoscale structures and devices. Heat and spin effects are also coupled by the dissipation and noise associated with magnetisation dynamics. The societal relevance of this topic is provided by the imminent breakdown of Moore's law by the thermodynamic bottleneck: further decrease in feature size and transistor speed goes in parallel with intolerable levels of ohmic energy dissipation associated with the motion of electrons in conducting circuits.Less
This chapter focuses on spin caloritronics, the field combining thermoelectrics with spintronics and nanomagnetism. The term ‘caloritronics’ has recently been introduced to describe the endeavour to control heat transport on micro- and nanometer scales. Alternative expressions such as ‘heattronics’ or ‘caloric transport’ have also been suggested. Specifically, spin caloritronics is concerned with new physics related to spin, charge, and entropy/energy transport in materials and nanoscale structures and devices. Heat and spin effects are also coupled by the dissipation and noise associated with magnetisation dynamics. The societal relevance of this topic is provided by the imminent breakdown of Moore's law by the thermodynamic bottleneck: further decrease in feature size and transistor speed goes in parallel with intolerable levels of ohmic energy dissipation associated with the motion of electrons in conducting circuits.
J. Nitta
- Published in print:
- 2012
- Published Online:
- December 2013
- ISBN:
- 9780199600380
- eISBN:
- 9780191775062
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199600380.003.0013
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. Exploitation of the spin degree of freedom for the conduction carriers provides a key strategy for finding ...
More
This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. Exploitation of the spin degree of freedom for the conduction carriers provides a key strategy for finding new functionalities. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. However, carriers in semiconductors are not spin-polarised, and generation of spin-polarised carriers is crucial for semiconductor spintronics. The main point of the chapter is spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. In particular, the Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor's two-dimensional electron gas.Less
This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. Exploitation of the spin degree of freedom for the conduction carriers provides a key strategy for finding new functionalities. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. However, carriers in semiconductors are not spin-polarised, and generation of spin-polarised carriers is crucial for semiconductor spintronics. The main point of the chapter is spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. In particular, the Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor's two-dimensional electron gas.
Jean-Pierre Launay and Michel Verdaguer
- Published in print:
- 2013
- Published Online:
- January 2014
- ISBN:
- 9780199297788
- eISBN:
- 9780191747021
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199297788.001.0001
- Subject:
- Physics, Atomic, Laser, and Optical Physics
This book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons: molecular electronics. Chapter 1 reviews basic ...
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This book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons: molecular electronics. Chapter 1 reviews basic concepts. Chapter 2 describes the magnetic properties due to localized electrons. This includes phenomena such as spin crossover, exchange interaction from dihydrogen to extended molecular magnetic systems, and magnetic anisotropy with single-molecule magnets. Chapter 3 is devoted to electrical properties due to moving electrons, first considering electron transfer in discrete molecular systems — in particular, in mixed valence compounds — and then, extended molecular solids described by band theory. Special attention is paid to structural distortions (Peierls instability) and interelectronic repulsions in narrow-band systems. Chapter 4 examines the properties of excited electrons responsible for photophysical properties, and dicusses electron transfer in the excited state and its application to photodiodes, organic light-emitting diodes, photovoltaic devices, and water photolysis. Energy transfer is treated in a similar way. Photomagnetism (how a photonic excitation modifies magnetic properties) is also introduced. In Chapter 5, most of the previous knowledge is combined in molecular electronics. The concept of hybrid molecular electronics (molecules connected to metal electrodes) is developed, fed by examples such as molecular wires, diodes, memory elements, field-effect transistors, and the use of magnetic properties for molecular spintronics. The extension to quantum computing is discussed.Less
This book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons: molecular electronics. Chapter 1 reviews basic concepts. Chapter 2 describes the magnetic properties due to localized electrons. This includes phenomena such as spin crossover, exchange interaction from dihydrogen to extended molecular magnetic systems, and magnetic anisotropy with single-molecule magnets. Chapter 3 is devoted to electrical properties due to moving electrons, first considering electron transfer in discrete molecular systems — in particular, in mixed valence compounds — and then, extended molecular solids described by band theory. Special attention is paid to structural distortions (Peierls instability) and interelectronic repulsions in narrow-band systems. Chapter 4 examines the properties of excited electrons responsible for photophysical properties, and dicusses electron transfer in the excited state and its application to photodiodes, organic light-emitting diodes, photovoltaic devices, and water photolysis. Energy transfer is treated in a similar way. Photomagnetism (how a photonic excitation modifies magnetic properties) is also introduced. In Chapter 5, most of the previous knowledge is combined in molecular electronics. The concept of hybrid molecular electronics (molecules connected to metal electrodes) is developed, fed by examples such as molecular wires, diodes, memory elements, field-effect transistors, and the use of magnetic properties for molecular spintronics. The extension to quantum computing is discussed.
Jean-Pierre Launay and Michel Verdaguer
- Published in print:
- 2013
- Published Online:
- January 2014
- ISBN:
- 9780199297788
- eISBN:
- 9780191747021
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199297788.003.0005
- Subject:
- Physics, Atomic, Laser, and Optical Physics
After an historical account of the evolution which led to the concept of molecular electronics, the ‘hybrid molecular electronics’ approach (molecules connected to nano-sized metallic electrodes) is ...
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After an historical account of the evolution which led to the concept of molecular electronics, the ‘hybrid molecular electronics’ approach (molecules connected to nano-sized metallic electrodes) is discussed. The different types of transport (1-step, 2-step) are described, including the case in which the molecule is paramagnetic (Kondo resonance). Several molecular achievements are presented: wires, diodes, memory cells, field-effect transistors, using molecules, but also carbon nanotubes. A spin-off result is the possibility of imaging molecular orbitals. The emerging field of molecular spintronics is presented. Besides hybrid devices, examples are given of electronic functionalities using ensemble of molecules, either in solution (logical functions) or in the solid state (memory elements). The relation with the domain of quantum computing is presented, including the particular domain of quantum Hamiltonian computing.Less
After an historical account of the evolution which led to the concept of molecular electronics, the ‘hybrid molecular electronics’ approach (molecules connected to nano-sized metallic electrodes) is discussed. The different types of transport (1-step, 2-step) are described, including the case in which the molecule is paramagnetic (Kondo resonance). Several molecular achievements are presented: wires, diodes, memory cells, field-effect transistors, using molecules, but also carbon nanotubes. A spin-off result is the possibility of imaging molecular orbitals. The emerging field of molecular spintronics is presented. Besides hybrid devices, examples are given of electronic functionalities using ensemble of molecules, either in solution (logical functions) or in the solid state (memory elements). The relation with the domain of quantum computing is presented, including the particular domain of quantum Hamiltonian computing.
Kannan M. Krishnan
- Published in print:
- 2016
- Published Online:
- December 2016
- ISBN:
- 9780199570447
- eISBN:
- 9780191813504
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199570447.003.0013
- Subject:
- Physics, Condensed Matter Physics / Materials
We introduce a new paradigm in electronics, where information is carried by electron spin in addition to its charge. Spin polarization, a function of the density of states of the majority (↑) and ...
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We introduce a new paradigm in electronics, where information is carried by electron spin in addition to its charge. Spin polarization, a function of the density of states of the majority (↑) and minority (↓) bands at the Fermi level, EF, and their Fermi velocities, determines the details of spin transport, including injection, accumulation, and diffusion lengths. Such magnetoelectronics is broadly presented in two categories: (1) metal spintronics that helped pioneer fundamental developments in the field, subsequently generating a number of important applications in information storage, automobile and biomedical technologies; and (2) semiconductor spintronics, that is rich in fundamental science with exciting possibilities for radically new applications. In addition, we discuss a variety of phenomena including spin transfer torque (STT), spin Hall effect (SHE), the related inverse spin Hall effect (ISHE), the spin-Seebeck effect, spin caloritronics and topological insulators, and conclude with a number of two- and three-terminal devices.Less
We introduce a new paradigm in electronics, where information is carried by electron spin in addition to its charge. Spin polarization, a function of the density of states of the majority (↑) and minority (↓) bands at the Fermi level, EF, and their Fermi velocities, determines the details of spin transport, including injection, accumulation, and diffusion lengths. Such magnetoelectronics is broadly presented in two categories: (1) metal spintronics that helped pioneer fundamental developments in the field, subsequently generating a number of important applications in information storage, automobile and biomedical technologies; and (2) semiconductor spintronics, that is rich in fundamental science with exciting possibilities for radically new applications. In addition, we discuss a variety of phenomena including spin transfer torque (STT), spin Hall effect (SHE), the related inverse spin Hall effect (ISHE), the spin-Seebeck effect, spin caloritronics and topological insulators, and conclude with a number of two- and three-terminal devices.
J. Nitta
- Published in print:
- 2017
- Published Online:
- December 2017
- ISBN:
- 9780198787075
- eISBN:
- 9780191829147
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/oso/9780198787075.003.0013
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over ...
More
This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.Less
This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.