H. B. Meerwaldt, G. A. Steele, and H. S. J. van der Zant
- Published in print:
- 2012
- Published Online:
- September 2012
- ISBN:
- 9780199691388
- eISBN:
- 9780191742255
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199691388.003.0012
- Subject:
- Physics, Theoretical, Computational, and Statistical Physics
Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. This chapter begins by describing several methods to detect the flexural motion of a CNT ...
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Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. This chapter begins by describing several methods to detect the flexural motion of a CNT resonator. Next, it illustrates how single-electron tunneling in quantum dot CNT resonators leads to sharp dips in the mechanical resonance frequency and significant damping. It discusses four different contributions to the nonlinear oscillation of a CNT resonator: beam-like mechanical nonlinearity, nonlinearity due to gate-induced mechanical tension, electrostatic nonlinearity, and nonlinearity due to single-electron tunneling, and provide quantitative estimates of their strengths. Finally, it shows how the large response of the resonance frequency of a CNT resonator to a change in gate voltage or tension makes CNT resonators ideally suited for parametric excitation and for studying the coupling between different mechanical modes.Less
Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. This chapter begins by describing several methods to detect the flexural motion of a CNT resonator. Next, it illustrates how single-electron tunneling in quantum dot CNT resonators leads to sharp dips in the mechanical resonance frequency and significant damping. It discusses four different contributions to the nonlinear oscillation of a CNT resonator: beam-like mechanical nonlinearity, nonlinearity due to gate-induced mechanical tension, electrostatic nonlinearity, and nonlinearity due to single-electron tunneling, and provide quantitative estimates of their strengths. Finally, it shows how the large response of the resonance frequency of a CNT resonator to a change in gate voltage or tension makes CNT resonators ideally suited for parametric excitation and for studying the coupling between different mechanical modes.
Tero T. Heikkilä
- Published in print:
- 2013
- Published Online:
- December 2013
- ISBN:
- 9780199592449
- eISBN:
- 9780191747618
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199592449.003.0007
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter discusses the phenomenon of Coulomb blockade, which takes place in small junctions. It first explains conditions of observing Coulomb blockade in single- or multiple junction systems and ...
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This chapter discusses the phenomenon of Coulomb blockade, which takes place in small junctions. It first explains conditions of observing Coulomb blockade in single- or multiple junction systems and then details the orthodox theory of single-electron tunnelling, which consists of calculating the tunnelling rates and using them in a master equation for the charge states. This theory allows understanding of the properties of a single-electron transistor. The higher-order cotunneling is explained briefly. The phenomenon of dynamical Coulomb blockade arising in single junctions placed in high-resistance environments is discussed in detail. The chapter closes by describing main single-electron devices besides the conventional single-electron transistor: Coulomb blockade thermometer, radio frequency single-electron transistor, and a single electron pump.Less
This chapter discusses the phenomenon of Coulomb blockade, which takes place in small junctions. It first explains conditions of observing Coulomb blockade in single- or multiple junction systems and then details the orthodox theory of single-electron tunnelling, which consists of calculating the tunnelling rates and using them in a master equation for the charge states. This theory allows understanding of the properties of a single-electron transistor. The higher-order cotunneling is explained briefly. The phenomenon of dynamical Coulomb blockade arising in single junctions placed in high-resistance environments is discussed in detail. The chapter closes by describing main single-electron devices besides the conventional single-electron transistor: Coulomb blockade thermometer, radio frequency single-electron transistor, and a single electron pump.
