B. K. Ridley
- Published in print:
- 2017
- Published Online:
- April 2017
- ISBN:
- 9780198788362
- eISBN:
- 9780191830280
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780198788362.003.0015
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter covers: the scattering potentia in a single heterostructure; intra-lowest-subband scattering rate; summing over qz; the form factor; lattice dispersion and regimes of frequency; LO-like ...
More
This chapter covers: the scattering potentia in a single heterostructure; intra-lowest-subband scattering rate; summing over qz; the form factor; lattice dispersion and regimes of frequency; LO-like and IF-like interactions including barrier modes; simple approximations; and the need for numerical evaluation.Less
This chapter covers: the scattering potentia in a single heterostructure; intra-lowest-subband scattering rate; summing over qz; the form factor; lattice dispersion and regimes of frequency; LO-like and IF-like interactions including barrier modes; simple approximations; and the need for numerical evaluation.
B. K. Ridley
- Published in print:
- 2017
- Published Online:
- April 2017
- ISBN:
- 9780198788362
- eISBN:
- 9780191830280
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780198788362.003.0009
- Subject:
- Physics, Condensed Matter Physics / Materials
The single heterostructure is one of the most technologically versatile devices, being the structure of field-effect transistors and Schottky-effect devices, to say nothing of its capability of ...
More
The single heterostructure is one of the most technologically versatile devices, being the structure of field-effect transistors and Schottky-effect devices, to say nothing of its capability of exhibiting the quantum Hall effect at low temperatures. Here, the focus is on a heterostructure composed of III–V compounds such as AlAs/GaAs at room temperature and above, where optical waves are readily excited. This chapter covers: hybrid model for optical modes: LO, pTO, IF; ionic displacement and associated electric fields; fields in the barrier layer – remote phonons; mechanical boundary condition u = 0; energy normalization; reduced boundary conditions; acoustic hybrids: sTA, pTA, pLO; and interface acoustic modes.Less
The single heterostructure is one of the most technologically versatile devices, being the structure of field-effect transistors and Schottky-effect devices, to say nothing of its capability of exhibiting the quantum Hall effect at low temperatures. Here, the focus is on a heterostructure composed of III–V compounds such as AlAs/GaAs at room temperature and above, where optical waves are readily excited. This chapter covers: hybrid model for optical modes: LO, pTO, IF; ionic displacement and associated electric fields; fields in the barrier layer – remote phonons; mechanical boundary condition u = 0; energy normalization; reduced boundary conditions; acoustic hybrids: sTA, pTA, pLO; and interface acoustic modes.
