Vladimir M. Agranovich
- Published in print:
- 2008
- Published Online:
- January 2009
- ISBN:
- 9780199234417
- eISBN:
- 9780191715426
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199234417.003.0013
- Subject:
- Physics, Atomic, Laser, and Optical Physics
This chapter discusses the excitons in organic-based nanostructures. In particular, two-dimensional Frenkel-Wannier-Mott (FWM) excitons in hybrid organic-inorganic nanostructures (quantum wells, ...
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This chapter discusses the excitons in organic-based nanostructures. In particular, two-dimensional Frenkel-Wannier-Mott (FWM) excitons in hybrid organic-inorganic nanostructures (quantum wells, quantum wires, quantum dots) are considered. Linear and nonlinear optical response of hybrid FWM excitons is calculated. Based on the fast energy transfer, new concept for light-emitting devices is proposed. Exciton energy transfer from organics to semiconductor nanocrystals and its possible application to carrier multiplication in quantum dots is mentioned. Finally, FWM excitons and polaritons in a hybrid microcavity containing crystalline organic layer and a resonant inorganic QW, are considered. First experiments demonstrating properties of hybrid structures are mentioned.Less
This chapter discusses the excitons in organic-based nanostructures. In particular, two-dimensional Frenkel-Wannier-Mott (FWM) excitons in hybrid organic-inorganic nanostructures (quantum wells, quantum wires, quantum dots) are considered. Linear and nonlinear optical response of hybrid FWM excitons is calculated. Based on the fast energy transfer, new concept for light-emitting devices is proposed. Exciton energy transfer from organics to semiconductor nanocrystals and its possible application to carrier multiplication in quantum dots is mentioned. Finally, FWM excitons and polaritons in a hybrid microcavity containing crystalline organic layer and a resonant inorganic QW, are considered. First experiments demonstrating properties of hybrid structures are mentioned.
V. M. Agranovich
- Published in print:
- 2007
- Published Online:
- May 2008
- ISBN:
- 9780199238873
- eISBN:
- 9780191716652
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199238873.003.0003
- Subject:
- Physics, Condensed Matter Physics / Materials
This chapter reviews the physics of conceptually new hybrid organic-inorganic semiconductor nanostructures. The resonant coupling between the Frenkel and Wannier-Mott exciton states in two different ...
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This chapter reviews the physics of conceptually new hybrid organic-inorganic semiconductor nanostructures. The resonant coupling between the Frenkel and Wannier-Mott exciton states in two different materials of the nanostructure can lead to fast and efficient non-contact and non-radiative energy transfer. Furthermore, the exciton-mediated nonlinearities are strongly enhanced in these artificial structures. A new family of light emitting devices based on the hybrid organic-inorganic semiconductor nanostructures is also discussed.Less
This chapter reviews the physics of conceptually new hybrid organic-inorganic semiconductor nanostructures. The resonant coupling between the Frenkel and Wannier-Mott exciton states in two different materials of the nanostructure can lead to fast and efficient non-contact and non-radiative energy transfer. Furthermore, the exciton-mediated nonlinearities are strongly enhanced in these artificial structures. A new family of light emitting devices based on the hybrid organic-inorganic semiconductor nanostructures is also discussed.
John W. Orton
- Published in print:
- 2008
- Published Online:
- January 2010
- ISBN:
- 9780199559107
- eISBN:
- 9780191712975
- Item type:
- book
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199559107.001.0001
- Subject:
- Physics, Crystallography: Physics
This book provides an overview of the fascinating spectrum of semiconductor physics, devices, and applications, presented from a historical perspective. It covers the subject from its inception in ...
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This book provides an overview of the fascinating spectrum of semiconductor physics, devices, and applications, presented from a historical perspective. It covers the subject from its inception in the early 19th century up to the recent millennium. The first chapter introduces the essential properties of semiconductor materials, together with a brief account of their distribution within the Periodic Table, while the second chapter outlines their development from Faraday's work on silver sulphide up to their application in microwave radar during the Second World War. Chapter three deals with the dramatic events leading to the invention of the transistor at Bell Labs in 1947, followed in chapter four by the application of silicon to the integrated circuit and to a series of power devices with wide ranging applications. Chapter five introduces a number of compound semiconductor materials with application to microwave and optical devices, chapter six describes the development of low-dimensional and nano-scale structures, while chapters seven, eight and nine cover light-emitting devices, fibre-optic communications and applications in the infra-red. The final chapter is concerned with large area applications such as LCD TVs and photovoltaics. The book emphasises the vital relationship between semiconductor physics, materials and devices and places this discussion within the context of appropriate applications. The book is organised so as to provide a text that is light on mathematics, together with a series of ‘boxes’ describing important specific examples with greater mathematical detail.Less
This book provides an overview of the fascinating spectrum of semiconductor physics, devices, and applications, presented from a historical perspective. It covers the subject from its inception in the early 19th century up to the recent millennium. The first chapter introduces the essential properties of semiconductor materials, together with a brief account of their distribution within the Periodic Table, while the second chapter outlines their development from Faraday's work on silver sulphide up to their application in microwave radar during the Second World War. Chapter three deals with the dramatic events leading to the invention of the transistor at Bell Labs in 1947, followed in chapter four by the application of silicon to the integrated circuit and to a series of power devices with wide ranging applications. Chapter five introduces a number of compound semiconductor materials with application to microwave and optical devices, chapter six describes the development of low-dimensional and nano-scale structures, while chapters seven, eight and nine cover light-emitting devices, fibre-optic communications and applications in the infra-red. The final chapter is concerned with large area applications such as LCD TVs and photovoltaics. The book emphasises the vital relationship between semiconductor physics, materials and devices and places this discussion within the context of appropriate applications. The book is organised so as to provide a text that is light on mathematics, together with a series of ‘boxes’ describing important specific examples with greater mathematical detail.
Raphaël Butté, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-François Carlin, and Nicolas Grandjean
- Published in print:
- 2013
- Published Online:
- January 2014
- ISBN:
- 9780199681723
- eISBN:
- 9780191761676
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199681723.003.0006
- Subject:
- Physics, Condensed Matter Physics / Materials
The aim of the present chapter is to provide the reader with an update on recent advances regarding the growth, characterization, and use of InAlN layers nearly lattice-matched to GaN. This alloy is ...
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The aim of the present chapter is to provide the reader with an update on recent advances regarding the growth, characterization, and use of InAlN layers nearly lattice-matched to GaN. This alloy is expected to permit realizing superior-quality transistors and optoelectronic devices. The state of the art of this technology is addressed.Less
The aim of the present chapter is to provide the reader with an update on recent advances regarding the growth, characterization, and use of InAlN layers nearly lattice-matched to GaN. This alloy is expected to permit realizing superior-quality transistors and optoelectronic devices. The state of the art of this technology is addressed.
Hideto Miyake
- Published in print:
- 2013
- Published Online:
- January 2014
- ISBN:
- 9780199681723
- eISBN:
- 9780191761676
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199681723.003.0007
- Subject:
- Physics, Condensed Matter Physics / Materials
We review the challenges encountered when growing aluminum-rich nitride epilayers and devices by using MOVPE, MBE, and hydride vapour phase epitaxy (HVPE). Various issues related to both n- and ...
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We review the challenges encountered when growing aluminum-rich nitride epilayers and devices by using MOVPE, MBE, and hydride vapour phase epitaxy (HVPE). Various issues related to both n- and p-doping, as well as control of dislocation densities, are addressed in the case of utilization of various substrates from silicon to GaN, up to AlN, SiC, and sapphire. C-plane, A-plane, M-plane, and semipolar orientations are considered, and optical properties are also discussed. The chapter concludes with a demonstration of the use of Si-doped AlGaN film as a target of electron-beam excitation: an ultraviolet (247-nm) light-source tube which indicates a lifetime over 2,000 hours.Less
We review the challenges encountered when growing aluminum-rich nitride epilayers and devices by using MOVPE, MBE, and hydride vapour phase epitaxy (HVPE). Various issues related to both n- and p-doping, as well as control of dislocation densities, are addressed in the case of utilization of various substrates from silicon to GaN, up to AlN, SiC, and sapphire. C-plane, A-plane, M-plane, and semipolar orientations are considered, and optical properties are also discussed. The chapter concludes with a demonstration of the use of Si-doped AlGaN film as a target of electron-beam excitation: an ultraviolet (247-nm) light-source tube which indicates a lifetime over 2,000 hours.
