E. L. Wolf
- Published in print:
- 2013
- Published Online:
- January 2014
- ISBN:
- 9780199645862
- eISBN:
- 9780191767852
- Item type:
- chapter
- Publisher:
- Oxford University Press
- DOI:
- 10.1093/acprof:oso/9780199645862.003.0006
- Subject:
- Physics, Condensed Matter Physics / Materials
After brief review of important electrical transport measurements, optical and Raman methods, techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy, ...
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After brief review of important electrical transport measurements, optical and Raman methods, techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy, spectroscopy (STM/STS) and scanning tunneling potentiometry are introduced. It is pointed out that ARPES, like conventional transport measurements, average over a large area, while STM and scanning single electron transistor (SSET) measurements are local, on an atomic scale in some cases. Capacitance spectroscopy is described and the scanning single electron transistor is described as a method of mapping surface potential and determining a density-of-states quantity called the inverse compressibility. The use of the latter SSET method in finding fractional quantum Hall effects is described.Less
After brief review of important electrical transport measurements, optical and Raman methods, techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy, spectroscopy (STM/STS) and scanning tunneling potentiometry are introduced. It is pointed out that ARPES, like conventional transport measurements, average over a large area, while STM and scanning single electron transistor (SSET) measurements are local, on an atomic scale in some cases. Capacitance spectroscopy is described and the scanning single electron transistor is described as a method of mapping surface potential and determining a density-of-states quantity called the inverse compressibility. The use of the latter SSET method in finding fractional quantum Hall effects is described.
