Jump to ContentJump to Main Navigation

You are looking at 1-10 of 11 items

  • Keywords: nitrides x
Clear All Modify Search

View:

Structural Chemistry of Alkali and Alkaline-Earth Metals

Wai-Kee Li, Gong-Du Zhou, and Thomas Chung Wai Mak

in Advanced Structural Inorganic Chemistry

Published in print:
2008
Published Online:
May 2008
ISBN:
9780199216949
eISBN:
9780191711992
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199216949.003.0012
Subject:
Physics, Crystallography

This chapter covers the structural chemistry of Groups 1 and 2 elements, except hydrogen. For Group 1 metals, special attention is paid to the oxides, lithium nitride, inorganic alkali metal ... More


Structural Chemistry of Group 15 Elements

Wai-Kee Li, Gong-Du Zhou, and Thomas Chung Wai Mak

in Advanced Structural Inorganic Chemistry

Published in print:
2008
Published Online:
May 2008
ISBN:
9780199216949
eISBN:
9780191711992
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199216949.003.0015
Subject:
Physics, Crystallography

This chapter focuses on nitrogen, including the N2 molecule, all-nitrogen ions, dinitrogen complexes, nitrogen oxides and hydrides, etc. A significant portion of the chapter is devoted to the ... More


Application to Semiconductors and Insulators

Wai-yim Ching and Paul Rulis

in Electronic Structure Methods for Complex Materials: The orthogonalized linear combination of atomic orbitals

Published in print:
2012
Published Online:
September 2012
ISBN:
9780199575800
eISBN:
9780191740992
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199575800.003.0005
Subject:
Physics, Condensed Matter Physics / Materials

This chapter covers the application of the OLCAO method to semiconductors and insulators. It is difficult to classify these crystals into distinctively different groups and some overlap between them ... More


Intersubband transitions in low-dimensional nitrides

Maria Tchernycheva and François H. Julien

in III-Nitride Semiconductors and their Modern Devices

Published in print:
2013
Published Online:
January 2014
ISBN:
9780199681723
eISBN:
9780191761676
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199681723.003.0012
Subject:
Physics, Condensed Matter Physics / Materials

This chapter presents an overview of the physics and device applications of intersubband (ISB) transitions in III-nitrides. It addresses the theoretical aspects of nitride ISB transitions, and ... More


Quantum Processes in Semiconductors

Brian K. Ridley

Published in print:
2013
Published Online:
December 2013
ISBN:
9780199677214
eISBN:
9780191760624
Item type:
book
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199677214.001.0001
Subject:
Physics, Condensed Matter Physics / Materials

This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors in a relatively informal style. The fifth edition includes new chapters that ... More


The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays

Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski

in III-Nitride Semiconductors and their Modern Devices

Published in print:
2013
Published Online:
January 2014
ISBN:
9780199681723
eISBN:
9780191761676
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199681723.003.0002
Subject:
Physics, Condensed Matter Physics / Materials

This chapter discusses the use of GaN crystals grown by both high-nitrogen-pressure solution (HNPS) and ammonothermal methods for laser diodes and laser diode arrays.


Epitaxial growth and benefits of GaN on silicon

Armin Dadgar and Alois Krost

in III-Nitride Semiconductors and their Modern Devices

Published in print:
2013
Published Online:
January 2014
ISBN:
9780199681723
eISBN:
9780191761676
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199681723.003.0003
Subject:
Physics, Condensed Matter Physics / Materials

In the past decade, GaN-on-silicon has advanced from a laboratory curiosity to a competitive alternative to GaN-on-sapphire and SiC for light-emitters, and is at present the favored material ... More


The growth of bulk aluminum nitride

Ronny Kirste and Zlatko Sitar

in III-Nitride Semiconductors and their Modern Devices

Published in print:
2013
Published Online:
January 2014
ISBN:
9780199681723
eISBN:
9780191761676
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199681723.003.0004
Subject:
Physics, Condensed Matter Physics / Materials

Three AlN growth methods are discussed: (1) sublimation/physical vapor transport (PVT), (2) hydride vapor phase epitaxy (HVPE), and (3) solution growth method. In this context, the influence of ... More


Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides

Walter R. L. Lambrecht and Atchara Punya

in III-Nitride Semiconductors and their Modern Devices

Published in print:
2013
Published Online:
January 2014
ISBN:
9780199681723
eISBN:
9780191761676
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199681723.003.0015
Subject:
Physics, Condensed Matter Physics / Materials

The heterovalent ternary II-IV-N2 compounds pave the way for interesting perspectives that are described in this chapter. They are obtained replacing two of the four group-III cations surrounding ... More


Terahertz emission in polaritonic systems with nitrides

Oleksandr Kyriienko, Ivan A. Shelykh, and Alexey V. Kavokin

in III-Nitride Semiconductors and their Modern Devices

Published in print:
2013
Published Online:
January 2014
ISBN:
9780199681723
eISBN:
9780191761676
Item type:
chapter
Publisher:
Oxford University Press
DOI:
10.1093/acprof:oso/9780199681723.003.0016
Subject:
Physics, Condensed Matter Physics / Materials

Terahertz physics is currently making great advances. This chapter addresses stimulated radiative relaxation between excitonic levels of semiconductors embedded into microcavities, promising ... More


View: